An Ultra-Low Leakage and Wide-Range Voltage Level Shifter for Low-Power Digital CMOS VLSI’s

Authors

  • Pasham Sai Sri, Vanapalli Sai Nirupita, Pediri Ramya B. Tech Students, Department Of Ece, Bhoj Reddy Engineering College For Women, India. Author
  • Ms. G Ranjitha Assistant Professor,ECE Department Bhoj Reddy Engineering College for Women Author

Abstract

This brief presents an ultra-low leakage and fast conversion level shifter with widerange voltage conversion and frequency. The proposed level shifter adopts the Transmission gate transistors, which can completely cut off the static current when the circuits stand by. The proposed level shifter also solves the swing problem and achieves a fast conversion, strengthening the pull-up network to ensure the internal node is fast and fully charged. Measurement results based on the 45 nm Cadence tool show that the average ultra-low leakage of the proposed level shifter is 34.8 W when converting from 0.4 V input to 1.08 V output. Meanwhile, the average propagation delay and the average energy per transition of the proposed level shifter are Low.

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Published

2025-06-21

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Section

Articles

How to Cite

An Ultra-Low Leakage and Wide-Range Voltage Level Shifter for Low-Power Digital CMOS VLSI’s. (2025). International Journal of Engineering and Science Research, 15(3s), 643-653. https://www.ijesr.org/index.php/ijesr/article/view/197